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UNISONIC TECHNOLOGIES CO., LTD
MJE13009
SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
DESCRIPTION
The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
NPN SILICON TRANSISTOR
1 TO-3P
1
TO-220
FEATURES
* VCEO 400 V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100 * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100 tc @ 8 A, 100 is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information.
1
TO-220F
*Pb-free plating product number:MJE13009L
ORDERING INFORMATION
Order Number Normal Lead Free Plating MJE13009-TA3-T MJE13009L-TA3-T MJE13009-TF3-T MJE13009L-TF3-T MJE13009-T3P-T MJE13009L-T3P-T Package TO-220 TO-220F TO-3P Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube
MJE13009L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F, T3P: TO-3P (3) L: Lead Free Plating Blank: Pb/Sn ,
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ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current Base Current Emitter Current Total Power Dissipation @ Ta = 25 Derate above 25 Total Power Dissipation @ TC = 25 Derate above 25 Continuous Peak* Continuous Peak* Continuous Peak* SYMBOL VCEO VCBO IEBO IC ICM IB IBM IE IEM PD PD
NPN SILICON TRANSISTOR
RATINGS 400 700 9 12 24 6 12 18 36 2 16 100 800 UNIT V V V A A A W mW/ W mW/
Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10% Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case PARAMETER *OFF CHARACTERISTICS Collector- Emitter Sustaining Voltage Collector Cutoff Current VCBO=Rated Value Emitter Cutoff Current *ON CHARACTERISTICS DC Current Gain SYMBOL VCEO ICBO IEBO hFE1 hFE 2 SYMBOL JA JC TEST CONDITIONS IC = 10mA, IB = 0 VBE(OFF) = 1.5Vdc VBE(OFF) = 1.5Vdc, TC = 100 VEB = 9Vdc, IC = 0 IC = 5A,VCE = 5V IC = 8A,VCE = 5V IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 8A, IB = 1.6A, TC = 100 IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A, TC = 100 4 180 0.06 0.45 1.3 0.2 0.92 0.12 0.1 1 3 0.7 2.3 0.7 RATINGS 54 4 MIN 400 1 5 1 40 30 1 1.5 3 2 1.2 1.6 1.5 V V V V V V V MHz pF s s s s s s TYP UNIT /W /W MAX UNIT V mA mA
ELECTRICAL CHARACTERISTICS (TC= 25 , unless otherwise specified.)
Current-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
DYNAMIC CHARACTERISTICS Transition frequency fT IC = 500mA, VCE = 10V, f = 1MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz SWITCHING CHARACTERISTICS (Resistive Load, Table 1) Delay Time tDLY VCC = 125Vdc, IC = 8A Rise Time tR IB1 = IB2 = 1.6A, tP = 25s Storage Time tS Duty Cycle 1% Fall Time tF Inductive Load, Clamped (Table 1, Figure 13) Voltage Storage Time tS IC=8A, Vclamp=300V, IB1=1.6A VBE(OFF) = 5V, TC = 100 Crossover Time tC *Pulse Test: Pulse Wieth = 300s, Duty Cycle = 2%
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+5V 1N4933 0.001 F 33 MJE210 VCC
NPN SILICON TRANSISTOR
RESISTIVE SWITCHING
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+125V
L MR826*
TEST CIRCUITS
5V PW DUTY CYCLE 10% 68 10 ns tR, tF 1k 1k +5V 1N4933 0.02 F 270
33 1N4933 2N2222 RB IB IC Vclamp *SELECTED FOR . 1 kV VCE D.U.T. 2N2905 47 1/2W 100 -VBE(off) MJE200 51
RC TUT RB SCOPE
5.1k
D1
1k
NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1
-4.0V
CIRCUIT VALUES
Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16
GAP for 200 H/20 A Lcoil = 200 H
VCC = 20 V Vclamp = 300 Vdc
VCC = 125 V RC = 15 D1 = 1N5820 or Equiv. RB =
OUTPUT WAVEFORMS
+10V
25 s
TEST WAVEFORMS
tF CLAMPED IC ICM t t1 VCE V CEM TIME t2 V clamp t2 Lcoil (ICM) V clamp tF t1 tF UNCLAMPED 9 t2 t1 ADJUSTED TO OBTAIN IC Lcoil (ICM) VCC Test Equipment Scope-Tektronics 475 or Equivalent
0 -8V tR, tF < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC
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CIRCUIT
24A
NPN SILICON TRANSISTOR
LOAD LINE DIAGRAMS
TURN-ON (FORWARD BIAS) SOA tON 10 ms DUTY CYCLE 10% PD = 4000 W 2 350V 12A TURN-ON TURN-OFF + VCC 400V 1 1 TURN-OFF (REVERSE BIAS) SOA 9.0 V 1.5 V VBE(off) DUTY CYCLE 10%
TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS
TIME DIAGRAMS
IC
Collector Current
SERIES SWITCHING REGULATOR
TC = 100C
VCE VCC
TIME
t
VCC
VOUT
700V
COLLECTOR VOLTAGE
TIME
IC
t
RINGING CHOKE INVERTER
24A
Collector Current
TURN-ON (FORWARD BIAS) SOA 10 ms tON DUTY CYCLE 10% PD = 4000 W 2 350V TURN-OFF (REVERSE BIAS) SOA 1.5 V VBE(off) 9.0 V DUTY CYCLE 10%
VCC N
VOUT
TC = 100C 12A
tOFF tON VCE N(VO) VCC V CC+ t LEAKAGE SPIKE
TURN-OFF TURN-ON + VCC VCC+N(VOUT )
400V 1
700V 1
t
COLLECTOR VOLTAGE
PUSH-PULL INVERTER/CONVERTER
24A
TURN-ON (FORWARD BIAS) SOA tON 10 ms DUTY CYCLE 10% PD = 4000 W 2 350V TURN-ON TURN-OFF (REVERSE BIAS) SOA 9.0 V 1.5 V VBE(off) DUTY CYCLE 10% 2 VCC VCC 400V 1 700V 1
IC tOFF tON t VCE 2 VCC VCC t
VOUT
Collector Current
TC = 100C 12A
VCC
TURN-OFF +
COLLECTOR VOLTAGE
SOLENOID DRIVER VCC
Collector Current
24A
TURN-ON (FORWARD BIAS) SOA tON 10 ms DUTY CYCLE 10% PD = 4000 W 2 350V TURN-OFF (REVERSE BIAS) SOA 9.0 V 1.5 V VBE(off) DUTY CYCLE 10% 2 VCC 400V 1 700V 1
IC
TC = 100C 12A
tON V CE VCC
tOFF t
SOLENOID
TURN-OFF TURN-ON + VCC
COLLECTOR VOLTAGE
t
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IC(A) 3 5 8 12 TC( ) 25 100 25 100 25 100 25 100 tsv(ns) 770 1000 630 820 720 920 640 800 trv(ns) 100 230 72 100 55 70 20 32
NPN SILICON TRANSISTOR
tfi(ns) 150 160 26 55 27 50 17 24 tti(ns) 200 200 10 30 2 8 2 4 tc(ns) 240 320 100 180 77 120 41 54
TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10-90% VCEM tfi = Current Fall Time, 90-10% ICM tti = Current Tail, 10-2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the turn-off waveforms is shown in Figure 13 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 14. In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25 and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100 .
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TYPICAL CHARATERISTICS
Figure 1. Forward Bias Safe Operating Area 100 50
Collector Current, IC (A)
NPN SILICON TRANSISTOR
Figure 2. Reverse Bias Switching Safe Operating Area 14
20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5 TC = 25 dc 1ms
10 s 100 s
Collector, IC (A)
12 10 8 6 4 2 0 3V 1.5V 0 100 200 300 400 500 600 700 Collector Emitter Clamp Voltage, VCBO (V) 800 VBE(OFF) = 9V 5V TC 100 IB1 = 2.5 A
THERMAL LIMIT BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 7 10 20 30 50 70 100 200 300 Collector Emitter Voltage, VCE (V) 500
Figure 3. Forward Bias Power Derating 1 Second Breakdown Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25 ; TJ(pk) is variable depending on power level. Second breakdown pulse limits are 25 . valid for duty cycles to 10% but must be derated when TC Second breakdown limitations do not derate the same as thermal limitations . Allowable current at the voltages shown on Figure 1 may be found at any case temperature by using the appropriate curve on Figure 3. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section.
JC(t)]
0.8 Power Derating Factor
0.6 Thermal Derating
0.4
0.2
0 20
40
60
80
100
120
140
160
Case Temperature, TC (C)
Figure 4. Typical Thermal Response [Z 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 Single Pulse 0.02 0.05 0.1 0.2 0.5 1
D = 0.5 0.2 0.1 0.05 0.02 P (pk) = r(t) JC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) TC = P(pk) Z JC(t) Duty Cycle, D = t1/t2 Z
JC (t) JC
Transient Thermal Resistance (Normalized), r(t)
0.01 0.01
5 2 Time, t (ms)
10
20
50
100
200
500
1.0k
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TYPICAL CHARACTERISTICS (Cont.)
Figure 5. DC Current Gain 50 VCE = 5V 2
NPN SILICON TRANSISTOR
Figure 6. Collector Saturation Region
Collector Emitter Voltage, VCE (V)
IC = 12A 1.6 IC = 1A 1.2 IC= 3A IC = 5A IC = 8A
30
DC Current Gain, hF E
TJ = 150 TJ = 25
20
0.8
10 7 5 0.2 0.3
0.4
TJ = 25
0.5 0.7 1
2
3
5
7
10
20
0 0.050.07 0.1
0.2 0.3
0.5 0.7 1
2
3
5
Collector Current, IC (A)
Base Current, IB (A)
Figure 7. Base Emitter Saturation Voltage 1.4 IC/IB = 3 1.2 0.7 0.6
Figure 8. Collector IC/IB = 3
Emitter Saturation Voltage
TJ = 150 0.5
Voltage, V (V)
1
Voltage, V (V)
0.4 0.3 0.2 0.1 TJ = 25
0.8
TJ = 25 TJ = 150
0.6
0.4 0.2 0.3
0.5 0.7 1 23 5 Collector Current, IC (A)
7 10
20
0 0.2 0.3
0.5 0.7 1 23 5 Collector Currnet, IC (A)
7 10
20
Figure 9. Collector Cutoff Region 10k VCE = 250V
Collector Current, IC (mA)
Figure 10. Capacitance 4k 2k
Capacitance, C (pF)
TJ = 25 Cib
1k TJ = 150 100 125 100 10 1 25 0.1 -0.4 REVERSE FORWARD +0.6 -0.2 0 +0.2 +0.4 Base Emitter Voltage, V BE (V) 75 50
1k 800 600 400 200 Cob
100 80 60 40 0.1 0.2 0.5 1 2 5 10 20 50 100 Reverse Voltage, VR (V)
200
500
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RESISTIVE SWITCHING PERFORMANCE
Figure 11. Turn On Time 1k 700 500 VCC = 125V IC/IB = 5 TJ = 25 2k
NPN SILICON TRANSISTOR
Figure 12. Turn Off Time
tS 1k 700
Time, t (ns)
Time, t (ns)
300 200 tR
500 300 200
VCC = 125V IC/IB = 5 TJ = 25
100 70 50 0.2 0.3 tDLY @ VBE(OFF ) = 5V 0.5 0.7 1 2 3 5 7 10 20
tF 100 0.2 0.3
0.5 0.7 1
2
5
7
10
20
Collector Current, IC (A)
Collector Crrent, IC (A)
Figure 13. Typical Inductive Switching Waveforms (at 300V and 12A with IB1 = 2.4A and VBE(off) = 5V)
IC
VOLTAGE 50 V/DIV CURRENT 2 A/DIV
V CE
IC VCE TIME 20 ns/DIV
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
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